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Substrate for Device

Substrate for Device

Mono Crystal Substrate

Mono Crystal Substrate
〈Basic Spec.〉 Impurity: Nitrogen<8ppm、B and Si<SIMS resolution
Orientation: (100) having off angle around 3 degree
Polishing: Regular roughness Ra<5nm, Fine polishing Ra<2nm
Size: 1x1 to 10x10mm, Thickness, 0.03-3mm
〈Special Spec.〉 Orientation: (110) and (111)
Off angle: Between 0 to 5 degree selected toward plane
〈High quality crystal〉
Low FWHM of X-ray locking curve, smaller than 40 or 50arcsec
〈High quality crystal〉 Low FWHM of X-ray locking curve, smaller than 40 or 50arcsec

Mosaic Substrate

Mosaic Substrate
* Jointing 2 to 9 mono-crystals
* Each crystal is (100) orientation
* Size: <30x30mm, Thickness 0.05-2mm

Epi-Substrate

1>B-doped epitaxial layer grown on regular substrate
 B concentration: 2x1016-1x1017/cm3 , Thickness: 0.5-10µm
 Mobility: 1,500cm2/Vs or more
2>High quality epitaxial layer grown on regular substrate
 N concentration<0.1ppm, Thickness<50µm
Item Size(mm) Othres
RN335 3×3×0.3
RN333K** 2.5×2.5×0.3 (111)face
RN555P 5×5×0.5 One face poished
RN10106PP 10×10×0.6 Both face polished
RN25256P 25×25×0.6 One face poished

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+81-6-6170-3871(8:30-17:30,JST)

EDP Corporation

4-6-3, Kamishinden, Toyonaka-shi, Osaka, 560-0085, Japan TEL:+81-661703871